Thermochemical and Mass Transport Modelling of the Chemical Vapour Deposition of Si1-xGex
نویسندگان
چکیده
The purpose of this article is to present, for the chemical vapour deposition process, mass transport models with near local thermochemical equilibrium imposed in the gas-phase and at the deposition surface. The theoretical problems arising from the linking of the two approaches, thermodynamics and mass transport, are shown and a solution procedure is proposed. As an illustration, selected results of thermodynamic and mass transport analysis and of the coupled approach showed that, for the deposition of Sil.,Ge, solid solution at 1300 K (system Si-Ge-CI-H-Ar), the thermodynamic heterogeneous stability of the reactive gases and the thermal diffusion led to the germanium depletion of the deposit.
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